hafnium oxide doped
- صفحه اصلی
- hafnium oxide doped
Junjie Yang, Ming-Wen Chu & Sang-Wook Cheong. Nature Materials 20, 826–832 ( 2021) Cite this article. 12k Accesses. 92 Citations. 36 Altmetric. Metrics. …
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This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However, …
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In addition, recent studies revealed a semiepitaxial growth of doped hafnium oxide layers on TiN. [103, 134, 146] The potential control of the ferroelectric material texture toward a preferred orientation at low temperature anneals is advantageous for the BEoL MFM integration. In the absence of bottom metal electrode, the substrate acts as the ...
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Hafnium dioxide (HfO2) has long been known as a refractory material due to its high melting temperature (~ 2800°C) and low thermal conductivity (1.5 W/m K) [1], [2]. Refractories are thermally insulating materials known to withstand high temperatures without being degraded and are used for high-temperature applications to reduce heat losses [3].
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Retention of the same state (SS), the new same state (NSS) and of the opposite state (OS) of a capacitor having hafnium oxide doped with about 5 mol% of SiO 2 between TiN electrodes. The ...
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In the past, hafnium dioxide has typically been used as a high-k dielectric in state-of-the-art complementary metal–oxide–semiconductor devices [1,2].However, since the discovery …
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Hafnium oxide (HfO 2) is an important high-κ dielectric in the microelectronics industry as it is an alternative to SiO 2.To minimize the total oxide thickness, attempts were made to grow HfO 2 directly on oxide-free Si surfaces. Although deposition was ultimately possible, it was shown that there is an incubation period for HfO 2 growth, 75 related to the relatively high …
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The discovery of ferroelectricity in nanoscale doped hafnium dioxide (HfO 2 ), a material whose ground state is not even polar 18, has completely changed the status quo in the field of ...
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The mechanism of nanoscopic domain switching in ferroelectric hafnium oxide and its implications for antiferroelectric-like behavior as well as for the wake-up effect is still widely discussed. Understanding this mechanism is of vital importance for a multitude of applications like piezoelectric actuators, pyroelectric sensors, and nonvolatile ...
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However, recent works discovered a new effect in the hafnium oxide system, namely electric field-induced crystallization 10. This allows to apply electric fields in order to crystallize the ...
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Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO 1.5 in HfO 2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the …
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Here, by structure evolution between fluorite HfO 2 and perovskite hafnate, we create an amorphous hafnium-based oxide that exhibits the energy density of ~155 J/cm 3 with an efficiency of 87% ...
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The recent discovery 1 of ferroelectricity in doped thin films of silicon-compatible hafnium oxide (HfO 2, or hafnia) has led to keen attention from both basic …
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In 2011, Boescke et al. demonstrated for the first time that hafnium oxide doped with silicon can possess ferroelectric properties. Recently, it was confirmed that this is a ferroelectric effect based on the crystal structure obtained during specific processing conditions . This finding may resolve the limited scalability of the second ...
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Ferroelectric hafnium oxide (HfO2) is considered a very prospective material for applications in integrated devices due to its considerably large spontaneous polarization and superior thickness scaling. In fact, the evolution of the ferroelectric hysteresis upon field cycling plays an important role in most applications; especially the so‐called wake‐up …
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The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO 2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other …
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Moreover, memristive systems based on CMOS compatible functional layers such as silicon oxide 17,18 and hafnium oxide 8,19,20 deposited on highly-doped silicon electrodes are promising candidates ...
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Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications. However, due to the polycrystalline nature of these hafnium oxide films, highly scaled devices face variability concerns. In order to enable …
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A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.
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Hafnium(IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe) 2 (EtMeNC(N i Pr) 2) 2].In the present work, our attention is focused on a detailed XPS characterization of a representative HfO 2 coating grown at 350 °C. …
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The results showed that Sr doping increased the grain size of HZO films, thereby reducing the grain boundaries between grains and reducing the leakage current. Compared with undoped HZO films, the …
به خواندن ادامه دهیدDoped hafnium oxide was shown to exhibit a strong ferroelectric behavior. It was implied that doping allows the stabilization of a HfO 2 non-centrosymmetric orthorhombic phase, a prerequisite for ferroelectric behavior. However, a number of reports showed comparable ferroelectric properties in undoped HfO 2, although with different …
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films …
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calcium doped hafnium oxide (Ca:HfO 2) is still missing. In this study, we show for the first time that ferroelectricity in hafnium oxide is able to be achieved by using bivalent calcium as a dopant.
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The discovery of ferroelectricity in hafnium oxide spurred a growing research field due to hafnium oxides compatibility with processes in microelectronics as well as its unique properties. Notably ...
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Coatings with tunable refractive index and high mechanical resilience are useful in optical systems. In this work, thin films of HfO2 doped with Al2O3 were deposited on silicon at 300 °C by using plasma-enhanced atomic layer deposition (PE-ALD). The mainly amorphous 60–80 nm thick films consisted Al in the range of 2 to 26 at.%. The …
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HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling …
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